808nm Multimode Laser Diode

Laser diode provided by EF optics at 808 nm in C-mount package provide state-of-the-art power and brightness. The multimode laser diode, small emitting aperture, combined with low beam divergence, make these devices the highest-brightness family of CW diode lasers available in the industry.

Standard Product Specifications for 808nm Diodes

Item	Symbol	MLD-808-500	MLD-808-1000	MLD-808-2000	MLD-808-2500	MLD-808-3000	MLD-808-5000	MLD-808-10000-CN	Units
CW Output Power	P	500	1000	2000	2500	3000	5000	10000	mW
Peak Wavelength	λp	808±5	808±4	808±3	808±3	808±3	808±3	808±10	nm
Threshold Current	Ith	≤0.13	≤0.36	≤0.6	≤0.5	≤0.8	≤1	≤1.2	A
Operating Current	Iop	≤0.60	≤1.3	≤2.6	≤2.7	≤3.5	≤6	≤11	A
Slope Efficiency	η	≥1.0	≥1.0	≥1.1	≥1.2	≥1.1	≥1.05	≥1.2	W/A
Operating Voltage	Vop	≤2.0	≤2.2	≤2	≤2.2	≤2.0	≤2.0	≤2.2	V
Horizontal Beam Divergence	θ∥	≤10	≤8	≤12	≤8	≤8	≤8	≤12	deg
Vertical Beam Divergence	θ⊥	≤38	≤36	≤70	≤36	≤35	≤35	≤40	deg
Wavelength Temperature Coefficient		0.3	0.25	0.28	0.25	0.28	0.28	0.28	nm/℃
Polarization		TE	TE	TM	TM	TM/TE	TM	TM
Package Type		C-Mount	C-Mount	C-Mount	C-Mount	C-Mount	C-Mount	CN-Mount
Storage Temperature	Tstg	-10~60	-10~80	-40~60	-10~80	0-55	0~55	-40~80	℃
Operating Temperature	Tc	0~35	0~30	15~35	-20~30	15-35	15~30	15~35	℃

808nm Multimode Laser Diode

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