| E-O Crystals |
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LiTaO3 is an E-O crystal widely used for E-O devices, due to its good optical NLO and E-O properties, as well as high damage threshold. EF optics supplies high quality LiTaO3 wafers with the following specifications for standard applications. We can also offer other specifications upon request.
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Diameter
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100.0±0.5 mm, 76.2±0.5 mm
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Thickness
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0.50±0.05 mm, 1.0±0.05, 0.79±0.01,
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0.71±0.01 mm, 0.66±0.1
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Bending degrees
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≤10 μm
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Taper
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≤20 μm
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Axially accuracy
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±0.20
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Base margin
and direction
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Datum
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≤±0.02
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The length of the base
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(a) 22±2 mm
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(b) 32±2 mm
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Surface finishing quality
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Chip surface
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Both sides polished 10/5
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LiNbO3 is widely used as electro-optic modulators and Q-switches for Nd:YAG, Nd:YLF and Ti:Sapphire lasers as well as modulators for fiber optics. The following table list the specifications of a typical LiNbO3 crystal used as Q-switch with transverse E-O modulation. The light propagates in z-axis and electric field applies to x-axis. The electro-optic coefficients of LiNbO3 are: r33 = 32 pm/V, r31 = 10 pm/V, r22 = 6.8 pm/V at low frequency and r33 = 31 pm/V, r31= 8.6 pm/V, r22 = 3.4 pm/V at high electric frequency. The half–wave voltage: Vπ=λd/ (2no3r22L), r c=(ne/no)3r33-r13
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Size
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9 X 9 X 25 mm3 or 10 X 10 X 20 mm3 or 4 X 4 X 15 mm3
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Other size is available upon request
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Tolerance of size
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Z-axis: ± 0.2 mm
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X-axis and Y-axis:±0.1 mm
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Chamfer
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less than 0.5 mm at 45°
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Accuracy of orientation
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Z-axis: <± 5’
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X-axis and Y-axis: < ± 10’
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Parallelism
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< 20"
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Finish
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10/5 scratch/dig
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Flatness
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λ/8 at 633 nm
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AR-coating
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R < 0.2% @ 1064 nm
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Electrodes
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Gold/Chrome plated on X-faces
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Wavefront distortion
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<λ/4 @ 633 nm
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Extinction ratio
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> 400:1 @ 633 nm, φ6 mm beam
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E-O Crystal Principle
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